ATMEGA649V-8AUR Atmel, ATMEGA649V-8AUR Datasheet - Page 324
![IC AVR MCU FLASH 64K 1.8V 64TQFP](/photos/12/13/121332/313-64-tqfp_sml.jpg)
ATMEGA649V-8AUR
Manufacturer Part Number
ATMEGA649V-8AUR
Description
IC AVR MCU FLASH 64K 1.8V 64TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet
1.ATMEGA329-16AU.pdf
(392 pages)
Specifications of ATMEGA649V-8AUR
Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI, UART/USART, USI
Peripherals
Brown-out Detect/Reset, LCD, POR, PWM, WDT
Number Of I /o
53
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Manufacturer
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27.8.18
27.8.19
27.8.20
324
ATmega329/3290/649/6490
Programming the EEPROM
Reading the EEPROM
Programming the Fuses
3. Load the page address using programming instructions 3b and 3c. PCWORD (refer to
4. Enter JTAG instruction PROG_PAGEREAD.
5. Read the entire page (or Flash) by shifting out all instruction words in the page (or Flash),
6. Enter JTAG instruction PROG_COMMANDS.
7. Repeat steps 3 to 6 until all data have been read.
Before programming the EEPROM a Chip Erase must be performed, see “Performing Chip
Erase” on page 323.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM write using programming instruction 4a.
3. Load address High byte using programming instruction 4b.
4. Load address Low byte using programming instruction 4c.
5. Load data using programming instructions 4d and 4e.
6. Repeat steps 4 and 5 for all data bytes in the page.
7. Write the data using programming instruction 4f.
8. Poll for EEPROM write complete using programming instruction 4g, or wait for t
9. Repeat steps 3 to 8 until all data have been programmed.
Note that the PROG_PAGELOAD instruction can not be used when programming the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM read using programming instruction 5a.
3. Load address using programming instructions 5b and 5c.
4. Read data using programming instruction 5d.
5. Repeat steps 3 and 4 until all data have been read.
Note that the PROG_PAGEREAD instruction can not be used when reading the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Fuse write using programming instruction 6a.
3. Load data high byte using programming instructions 6b. A bit value of “0” will program the
4. Write Fuse High byte using programming instruction 6c.
5. Poll for Fuse write complete using programming instruction 6d, or wait for t
6. Load data low byte using programming instructions 6e. A “0” will program the fuse, a “1”
7. Write Fuse low byte using programming instruction 6f.
Table 27-10 on page
starting with the LSB of the first instruction in the page (Flash) and ending with the MSB
of the last instruction in the page (Flash). The Capture-DR state both captures the data
from the Flash, and also auto-increments the program counter after each word is read.
Note that Capture-DR comes before the shift-DR state. Hence, the first byte which is
shifted out contains valid data.
(refer to
corresponding fuse, a “1” will unprogram the fuse.
Table 27-12 on page
will unprogram the fuse.
Table 27-12 on page
298) is used to address within one page and must be written as 0.
307).
307).
WLRH
2552K–AVR–04/11
(refer to
WLRH
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