MCIMX251AVM4 Freescale Semiconductor, MCIMX251AVM4 Datasheet - Page 20

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MCIMX251AVM4

Manufacturer Part Number
MCIMX251AVM4
Description
IC MPU I.MX25 AUTO 400MAPBGA
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Datasheet

Specifications of MCIMX251AVM4

Core Processor
ARM9
Core Size
32-Bit
Speed
400MHz
Connectivity
1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
Peripherals
DMA, I²S, POR, PWM, WDT
Number Of I /o
128
Program Memory Type
External Program Memory
Ram Size
144K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.52 V
Data Converters
A/D 3x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
400-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

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Part Number
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Quantity
Price
Part Number:
MCIMX251AVM4
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
3.5
This section includes the DC parameters of the following I/O types:
3.5.1
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see the
External Signals and Pin Multiplexing chapter of the i.MX25 Reference Manual for details).
20
1
2
3
4
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to boards
Junction to case (top)
Junction to package top
Junction-to-ambient thermal resistance determined per JEDC JESD51-3 and JESD51-6. Thermal test board meets JEDEC
specification for this package.
Junction-to-board thermal resistance determined per JEDC JESD51-8. Thermal test board meets JEDEC specification for
this package.
Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is
used for the case temperature. Reported value includes the thermal resistance of the interface layer.
Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, this thermal characterization parameter is written
as Psi-JT.
Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K
Mold compound: Generic mold compound; k = 0.9 W/m K
DDR I/O: Mobile DDR (mDDR), double data rate (DDR2), or synchronous dynamic random
access memory (SDRAM)
General purpose I/O (GPIO)
I/O DC Parameters
DDR I/O DC Parameters
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output. The association is shown in the “Signal Multiplexing”
chapter of the reference manual.
2
1
1
1
1
natural convection
natural convection
(@200 ft/min)
(@200 ft/min)
3
Rating
4
i.MX25 Applications Processor for Automotive Products, Rev. 8
Table 16. Thermal Resistance Data
Single layer board (1s)
Four layer board (2s2p)
Single layer board (1s)
Four layer board (2s2p)
Natural convection
NOTE
Condition
Symbol
R
R
R
R
R
R
eJCtop
Ψ
eJMA
eJMA
eJA
eJA
eJB
JT
Freescale Semiconductor
Value
55
33
46
29
22
13
2
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit

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