MCIMX251AVM4 Freescale Semiconductor, MCIMX251AVM4 Datasheet - Page 33

• Manufacturer Part Number: MCIMX251AVM4
• Description: IC MPU I.MX25 AUTO 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX251AVM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

1.Maximum condition for tpr, tpo, and tpv: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpr, tpo, and tpv: bcs
2. Minimum condition for tps: wcs model, 1.1 V, IO 3.0 V and 105 °C. tps is measured between VIL to VIH for rising edge and
3. Maximum condition for tdit: bcs model, 1.3 V, IO 3.6 V and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
5. Hysteresis mode is recommended for input with transition time greater than 25 ns.
3.6.3
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see
Chapter 4, “External Signals and Pin Multiplexing,” in the i.MX25 Multimedia Applications Processor
Reference Manual).
3.6.3.1
Table 24
1.8V (± 5%) applications.
Freescale Semiconductor
Input Pad Propagation Delay without
Hysteresis, 50%–50%
Input Pad Propagation Delay with Hysteresis,
50%–50%
Input Pad Propagation Delay without
Hysteresis, 40%–60%
Input Pad Propagation Delay with Hysteresis,
40%–60%
Input Pad Transition Times without Hysteresis
Input Pad Transition Times with Hysteresis
Maximum Input Transition Times
Duty cycle
Clock frequency
Output pad transition times (max. drive)
Output pad transition times (high drive)
Output pad transition times (standard drive)
model, 1.3 V, IO 3.6 V and –40 °C. Input transition time from core is 1ns (20%–80%).
between VIH to VIL for falling edge.
IO 3.6 V and –40 °C. Input transition time from pad is 5ns (20%–80%).
shows AC parameters for mobile DDR I/O. These settings are suitable for mDDR and DDR2
DDR I/O AC Parameters
DDR_TYPE = 00 Standard Setting I/O AC Parameters and Requirements
Parameter
Table 23. Fast I/O AC Parameters for OVDD = 3.0
i.MX25 Applications Processor for Automotive Products, Rev. 8
Table 24. AC Parameters for Mobile DDR I/O
Symbol
Fduty
tpr
tpr
tpr
trm
trfi
trfi
f
tpi
tpi
tpi
tpi
Condition
1.6pF
1.6pF
1.6pF
1.6pF
1.6pF
1.6pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
—
Load
—
—
0.729/0.458 0.97/0.0649 1.404/0.97
1.203/0.938 1.172/1.187 1.713/1.535
0.879/0.977 1.434/1.12 1.854/1.427
1.353/1.457 1.637/1.659 2.163/1.991
0.16/0.12
0.16/0.13
Rise/Fall
0.52/0.51
0.98/0.96
1.13/1.10
2.15/2.10
2.26/2.19
4.30/4.18
—
Min.
40
—
–
3.6 V (continued)
0.23/0.18
0.22/0.18
0.79/0.72
1.49/1.34
1.74/1.55
3.28/2.92
3.46/3.07
6.59/5.79
Typ.
—
50
—
10.13/8.55
Rise/Fall
1.25/1.09
2.31/1.98
2.71/2.30
5.11/4.31
5.39/4.56
0.33/0.29
0.33/0.29
Max.
133
60
—
Units
MHz
ns
ns
ns
%
ns
ns
ns
ns
ns
ns
ns
Notes
—
1
1
4
5
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