BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 13

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Multi TOPLED
Phototransistors
Detector/Emitter in Multi TOPLED package
Package
Infrared Components
Silicon Photodetectors
Type
SFH 7225
Emitter
λ
typ
[nm]
591
Detector
Radiant sensi-
tive area typ.
[mm
0.038
peak
2
]
Half angle
ϕ
[°]
± 60
I
[μA]
650
CE typ
I
[mcd]
63 ... 200
Measurement
cond.
Std. Light A, E
= 1000 lx, V
= 5V
V
CE
v
I
= 20 ms
V
max.
[V]
35
F
CE
= 20 mA, t
p
V
[V]
2 (≤ 2.6)
Crosstalk
I
[mA]
0.5 ... 5
PCE, typ
F
Measurement
cond.
I
= 20 ms
Measurement
Conditions
I
= 5 V
F
F
= 20 mA, V
= 20 mA, t
p
CE
Ordering Code
Q65110A2743
Technical Data
Package
Fig.
11
119