BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 21

Photodetector Transistors PHOTODIODE

BPX 43-3/4

Manufacturer Part Number
BPX 43-3/4
Description
Photodetector Transistors PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheets

Specifications of BPX 43-3/4

Maximum Power Dissipation
220 mW
Maximum Dark Current
20 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-18
Voltage - Collector Emitter Breakdown (max)
50V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
300nA
Wavelength
880nm
Viewing Angle
30°
Power - Max
220mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.22/0.24V
Dark Current (max)
100nA
Light Current
6000/9500uA
Rise Time
12000/15000ns
Fall Time
12000/15000ns
Power Dissipation
220mW
Peak Wavelength
880nm
Half-intensity Angle
30deg
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P3581
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
TO39
SMT DIL
TOPLED RG
T 1
Smart DIL
CHIPLED
Ambient Light Sensors
Photodiode Ambient Light Sensors
Package
Phototransistor Ambient Light Sensors
Package
Infrared Components
Silicon Photodetectors
Type
BPW 21
SFH 2430
SFH 2270 R
Type
SFH 3310
SFH 3410
SFH 3410-1/2
SFH 3410-2/3
SFH 3410-3/4
SFH 3710
SFH 3710-2/3
SFH 3710-3/4
http://catalog.osram-os.com
http://catalog.osram-os.com
Half angle
ϕ
[°]
± 55
± 60
± 60
Half angle
ϕ
[°]
± 75
± 60
± 60
Radiant sen-
sitive area
typ.
[mm
7.45
7.02
0.16
Radiant sensi-
tive area typ.
[mm
0.29
0.29
0.29
2
2
]
]
I
[μA]
10 (≥ 5.5)
6.3 (≥ 5)
0.0056 (≥
0.0044)
P
I
[μA]
2.5 ... 8
3.2 ... 25
3.2 ... 10
5 ... 16
8 ... 25
2.5 ... 12.5
2.5 ... 8
4 ... 12.5
PCE
Measure-
ment cond.
E
lx, Std. Light
A, V
E
lx, Std. Light
A, V
E
cm
560 nm, V
= 1 V
v
v
e
= 1000
= 1000
= 10 μW/
2
Measurement
cond.
λ = 560 nm, E
10 μW/cm
5 V
E
Light A, V
λ = 560 nm, E
10 μW/cm
5 V
R
R
, λ =
v
= 5 V
= 5 V
= 20 lx, Std.
R
CE
2
I
[nA]
2 (≤ 30)
0.1 (≤ 5)
0.005 (≤
0.15)
2
R
, V
, V
= 5 V
CE
CE
e
e
=
=
=
=
V
max.
[V]
5.5
5.5
5.5
CE
Measure-
ment cond.
V
V
V
R
R
R
= 5 V
= 5 V
= 1 V
λ
typ.
[nm]
350 ... 970
350 ... 970
350 ... 950
10%
λ
typ.
[nm]
350 ... 820
400 ... 900
480 ... 650
10%
Ordering Code
Q62702P0885
Q65110A2673
Q65110A9911
Ordering Code
Q65110A5343
Q65110A1211
Q65110A2653
Q65110A2654
Q65110A2655
Q65110A3107
Q65110A3512
Q65110A3511
Technical Data
Package
Fig.
45
50
97
Package
Fig.
15
51
52
127

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