BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 16

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
122
SMT DIL
SMT DIL RG
Smart DIL
T1 3/4 SMR
CHIPLED
Photodiodes
SMT PIN Photodiodes in clear package
Package
Infrared Components
Silicon Photodetectors
Type
BP 104 S
BPW 34 S
BPW 34 BS
BP 104 SR
BPW 34 SR
SFH 2400
SFH 2505
SFH 2701
http://catalog.osram-os.com
Half
angle
φ
±
[°]
± 60
± 60
± 60
± 60
± 60
± 60
± 15
± 60
Radiant
sensitive
area typ.
[mm
4.84
7.02
7.45
4.84
7.02
1.00
1.00
0.36
2
]
I
[μA]
55 (≥
40)
80 (≥
50)
75
55 (≥
40)
80 (≥
50)
10 (>
6)
100
1.4
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measurement
cond.
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
E
Std. Light A,
V
v
R
v
R
v
R
v
R
v
R
v
R
v
R
v
R
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 1000 lx,
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
1 (≤ 5)
1 (≤ 5)
0.05 (≤
5)
R
Measure-
ment cond.
V
V
V
R
R
R
R
R
R
R
R
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 20 V
= 20 V
= 5 V
λ
typ.
[nm]
400 ...
1100
400 ...
1100
350 ...
1100
400 ...
1100
400 ...
1100
400 ...
1100
400 ...
1100
400 ...
1050
10%
t
typ
[μs]
0.02
0.02
0.025
0.02
0.02
0.005
0.005
0.002
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 650
nm, I
mA
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 5 V,
= 50 Ω,
p
= 1
Ordering Code
Q65110A2626
Q65110A1209
Q65110A2625
Q65110A4262
Q65110A2701
Q65110A2628
Q65110A1203
Q65110A2960
Technical Data
Package
Fig.
29
29
29
30
30
31
32
33