BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 26

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
132
TO39
DIL
SMT DIL
Photodetectors for special applications
Dual photodiodes
Package
Infrared Components
Silicon Photodetectors
Type
SFH 221
BPX 48
KOM 2125
http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 55
± 60
± 60
Radiant
sensitive
area typ.
[mm
1.54
1.54
4 diode A
10 diode B
2
]
I
[μA]
24 (≥ 15)
24 (≥ 15)
40 (≥ 30)
diode A
100 (≥ 75)
diode B
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measure-
ment cond.
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
v
v
v
= 1000
= 1000
= 1000
R
R
R
I
[nA]
10 (≤
100)
10 (≤
100)
5 (≤ 30)
diode A
10 (≤ 30)
diode B
R
Measure-
ment
cond.
V
V
V
R
R
R
= 10 V
= 10 V
= 10 V
λ
typ.
[nm]
400 ...
1100
400 ...
1150
400 ...
1100
10%
t
typ
[μs]
0.5
0.5
0.018
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
L
L
L
= 5 V,
= 1 kΩ,
= 5 V,
= 1 kΩ,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P0270
Q62702P0017S0
01
Q65110A2703
Technical Data
Package
Fig.
48
49
36