BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 41

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Infrared Emitters
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
T 1
T 1
T 1 3/4
T 1 3/4
T 1 3/4
Power Emitters (> 40 mW)
Emitters in plastic package
Package
Infrared Components
Infrared Emitters
Type
SFH 4350
SFH 4341
SFH 4550
SFH 4555
SFH 4545
SFH 4546
SFH 4547
SFH 4556
SFH 4557
http://catalog.osram-os.com
λ
typ
[nm]
860
950
860
860
950
950
950
860
860
peak
Half angle
ϕ
[°]
± 13
± 11
± 3
± 5
± 5
± 20
± 30
± 20
± 30
Φ
typ
[mW]
50
40
50
50
50
50
55
50
60
e
I
[mW/sr]
110 (≥ 40)
80 (≥ 25)
700 (≥
400)
500 (≥
160)
500 (≥
160)
140 (≥ 40)
75 (≥ 40)
130 (≥ 40)
80 (≥ 40)
e
Measure-
ment cond.
I
t
I
t
I
t
I
t
I
t
I
t
I
t
I
t
I
t
F
F
F
F
F
F
F
F
F
p
p
p
p
p
p
p
p
p
=100 mA,
=70 mA,
=100 mA,
=100 mA,
=100 mA,
=100 mA,
=100 mA,
=100 mA,
=100 mA,
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
V
[V]
1.5 (≤ 1.8)
1.6 (≤ 2)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
F
Measure-
ment cond.
I
mA, t
ms
I
t
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
F
F
F
F
F
F
F
F
F
p
= 100
= 70 mA,
= 100
= 100
= 100
= 100
= 100
= 100
= 100
= 20 ms
p
p
p
p
p
p
p
p
= 20
= 20
= 20
= 20
= 20
= 20
= 20
= 20
t
typ
[ns]
12
11
12
12
11
11
12
12
12
r
, t
f
Ordering Code
Q65110A2091
Q65110A8092
Q65110A1772
Q65110A7341
Q65110A8095
Q65110A8096
Q65111A1141
Q65110A6087
Q65111A1142
Technical Data
Package
Fig.
76
76
74
78
78
75
104
75
104
147