TP2520N8-G Supertex, TP2520N8-G Datasheet - Page 2

• Manufacturer Part Number: TP2520N8-G
• Description: MOSFET Small Signal 200V 12Ohm
• Manufacturer: Supertex

Specifications of TP2520N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.26 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics
Notes:
Switching Waveforms and Test Circuit
∆R
† I
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
1.
2.
∆V
R
BV
V
t
Sym
I
C
C
t
C
G
d(OFF)
TO-243AA (SOT-89)
I
I
D(ON)
V
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
D
GS(th)
OSS
RSS
t
t
ISS
SD
rr
FS
DSS
r
f
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
(continuous) is limited by max rated T
Package
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state
resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
OUTPUT
INPUT
-10V
V
0V
0V
DD
10%
GS(th)
DS(ON)
with temperature
(continuous)
with temperature
t
d(ON)
10%
t
(ON)
-260
(mA)
●
I
D
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
t
O
.
r
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
(T
90%
A
†
= 25°C unless otherwise specified)
(pulsed)
90%
t
d(OFF)
-2.0
t
(A)
90%
(OFF)
I
D
t
F
10%
-0.25
-0.75
-200
Power Dissipation
Min
-1.0
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ T
2
A
1.6
(W)
= 25
Typ
-0.7
-2.1
250
300
8.0
10
75
20
10
-
-
-
-
-
-
-
-
-
-
-
-
O
C
GENERATOR
PULSE
Max
-100
-2.4
-1.0
125
-1.8
4.5
-10
1.7
●
15
12
85
35
10
15
20
15
-
-
-
-
-
Tel: [phone]
R
INPUT
GEN
(
O
C/W)
θ
15
mV/
mmho
jc
Units
%/
mA
nA
μA
pF
ns
ns
Ω
V
V
A
V
O
O
C
C
(
O
●
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
I
R
V
V
78
D
C/W)
θ
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
j
= -750mA,
a
‡
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8 Max Rating,
= 0V, T
= -4.5V, V
= -10V, V
= -4.5V, I
= -10V, I
= -10V, I
= -25V, I
= 0V,
= -25V,
= -25V,
= 0V, I
= 0V, I
= 25Ω
DS
DS
, I
, I
V
R
D
SD
SD
DD
A
L
D
D
DS
-260
(mA)
I
= -2.0mA
= -1.0mA
= -1.0mA
= 125°C
D
D
D
DR
= -500mA
= -500mA
D
DS
Output
D.U.T.
= Max Rating
DS
= -200mA
= -200mA
= -200mA
DS
†
= -100mA
= -25V
= -25V
= 0V
TP2520
-2.0
I
DRM
(A)