TP2520N8-G Supertex, TP2520N8-G Datasheet - Page 4

• Manufacturer Part Number: TP2520N8-G
• Description: MOSFET Small Signal 200V 12Ohm
• Manufacturer: Supertex

Specifications of TP2520N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.26 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
-2.5
-2.0
-1.5
-1.0
-0.5
1.1
1.0
0.9
50
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
DS
BV
C
= -25V
RSS
DSS
-2
Transfer Characteristics
-10
0
Variation with Temperature
f = 1MHz
V
V
-4
DS
GS
T
T
A
j
-20
(volts)
50
(°C)
= -55°C
(volts)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
C
OSS
ISS
150
-10
-40
4
-10
50
40
30
20
10
1.2
1.1
1.0
0.9
0.8
-8
-6
-4
-2
0
0
-50
0
0
●
V
V
Tel: [phone]
(th)
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
@ -1mA
73pF
and R
-0.5
0.5
0
V
Q
DS
GS
G
R
Variation with Temperature
(nanocoulombs)
I
= -4.5V
-1.0
D
1.0
DS(ON)
(amperes)
T
V
j
DS
50
(°C)
●
@ -10V, -0.2A
= -10V
V
www.supertex.com
GS
-1.5
1.5
= -10V
200pF
V
100
DS
-2.0
2.0
= -40V
-2.5
150
2.5
TP2520
2.5
2.0
1.5
1.0
0.5
0