TP2635N3-G Supertex, TP2635N3-G Datasheet

TP2635N3-G

Manufacturer Part Number

TP2635N3-G

Description

MOSFET Small Signal 350V 15Ohm

Manufacturer

Supertex

Datasheet

1.TP2640N3-G.pdf (5 pages)

Specifications of TP2635N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

15 Ohm @ 10 V

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.18 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Low threshold (-2.0V max.)

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TP2635

Device

Package Option

TP2635N3-G

TO-92

P-Channel Enhancement-Mode

Vertical DMOS FET

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

DSS

(max)

-350

(V)

+300°C

/BV

Value

±20V

DGS

DSS

Package may or may not include the following marks: Si or

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

Product Marking

(max)

DS(ON)

(Ω)

Y Y W W

2 6 3 5

●

SiT P

Tel: 408-222-8888

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

(max)

-2.0

GS(th)

(V)

●

= “Green” Packaging

www.supertex.com

DRAIN

GATE

TP2635

(min)

-0.7

D(ON)

(A)

Related parts for TP2635N3-G

TP2635N3-G Summary of contents

Page 1

... General purpose line drivers ► Telecom switches Ordering Information Package Option Device TO-92 TP2635 TP2635N3-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... GS 0. -10V mmho V = -25V 300 -25V 1.0MHz -25V -300mA 25Ω GEN GEN D.U.T. Output INPUT ● Tel: 408-222-8888 ● www.supertex.com TP2635 I DRM (A) -0.8 = -2.0mA D = -1.0mA D = -1.0mA -100V DS = Max rating DS = 125 -25V DS = -20mA D = -150mA D = -300mA D = -300mA D = -300mA D = -200mA SD = -200mA SD ...

Page 3

... V = -10V GS -4V -0.6 -0.4 -3V -0 (volts) DS Power Dissipation vs. Temperature 2.0 1.6 1.2 TO-92 0.8 0 100 125 T ° Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 1.0W 0 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TP2635 -10 150 10 ...

Page 4

... On-Resistance vs. Drain Current V = -2. -4. -10V -0.4 -0.8 -1.2 -1.6 I (amperes and R Variation with Temperature -1mA (th -10V, -0.3A DS(ON) - 100 T ° Gate Drive Dynamic Characteristics 678pF V = -10V -40V DS 263pF (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TP2635 -2.0 2.5 2.0 1.5 1.0 0.5 0 150 5 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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