VN10KN3-G Supertex, VN10KN3-G Datasheet - Page 2

• Manufacturer Part Number: VN10KN3-G
• Description: MOSFET Small Signal 60V 5Ohm
• Manufacturer: Supertex

Specifications of VN10KN3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.31 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
†
ΔV
R
BV
V
1.
2.
Sym
I
C
C
t
C
I
I
G
t
V
D(ON)
DS(ON)
(OFF)
GS(th)
GSS
(ON)
DSS
DS(ON)
t
OSS
RSS
I
GS(th)
ISS
SD
rr
D
DSS
FS
Package
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
(continuous)
GS(th)
DS(ON)
10%
(mA)
310
I
with temperature
D
with temperature
t
d(ON)
10%
t
(ON)
●
†
90%
1235 Bordeaux Drive, Sunnyvale, CA 94089
j
t
. (VN0106N3 can be used if an I
r
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
(pulsed)
1.0
(A)
O
I
90%
C unless otherwise specified)
t
D
d(OFF)
t
(OFF)
t
90%
F
10%
Power Dissipation
2
0.75
Min
100
@T
0.8
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
D
C
(continuous) of 500mA is needed.)
1.0
(W)
= 25
Typ
-3.8
160
0.7
2.0
0.8
GENERATOR
O
48
16
C
-
-
-
-
-
-
-
-
-
-
-
PULSE
●
R
INPUT
Tel: [phone]
Max
GEN
100
500
2.5
7.5
5.0
5.0
10
60
25
10
10
-
-
-
-
-
-
-
(
O
125
C/W)
θ
mV/
mmho V
Units
%/
jc
µA
nA
pF
ns
ns
Ω
V
V
A
V
O
O
C
C V
●
V
V
V
V
V
T
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
(
D
O
A
170
www.supertex.com
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
C/W)
θ
= 600mA,
= 125°C
ja
V
= 0V, I
= V
= V
= 15V, V
= 0V, V
= 0V, V
= 10V, V
= 5.0V, I
= 10V, I
= 10V, I
= 10V, I
= 0V,
= 25V,
= 15V,
= 0V, I
= 0V, I
DD
= 25Ω
R
L
DS
DS
D.U.T.
, I
, I
OUTPUT
D
SD
SD
D
D
DS
DS
D
D
D
(mA)
= 100µA
310
= 1.0mA
= 1.0mA
D
I
DS
DS
= 500mA
= 500mA
DR
= 500mA
= 500mA
= 500mA
= 45V
= 45V,
= 200mA
†
= 0V
= 10V
VN10K
I
1.0
(A)
DRM