VN10KN3-G Supertex, VN10KN3-G Datasheet - Page 4

• Manufacturer Part Number: VN10KN3-G
• Description: MOSFET Small Signal 60V 5Ohm
• Manufacturer: Supertex

Specifications of VN10KN3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.31 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
1.1
1.0
0.9
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V DS = 10V
300µs, 2%
DUTY CYCLE
PULSE TEST
BV
DSS
10
2
Transfer Characteristics
0
Variation with Temperature
V
20
V
GS
4
DS
T
(volts)
j
50
(volts)
(°C)
●
30
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
C
C
RSS
ISS
100
40
(cont.)
8
150
10
50
4
0.01
250
200
150
100
100
1.0
0.1
50
10
1
0
0.01
1
Transconductance vs Gate-Source Voltage
0
On-Resistance vs. Gate-to-Source Voltage
●
Output Conductance vs Drain Current
V
3000µs, 2%
DUTY CYCLE
PULSE TEST
Tel: [phone]
DS
V DS = 25V
80µs, 1%
DUTY CYCLE
PULSE TEST
= 10V
2
V
4
V
GS
I
GS
D
0.1
10
(amperes)
(volts)
(Volts)
●
6
www.supertex.com
REDUCTION
DUE TO
HEATING
V
DS
= 0.1V
8
100
1.0
10
VN10K