LND250K1-G Supertex, LND250K1-G Datasheet

LND250K1-G

Manufacturer Part Number

LND250K1-G

Description

MOSFET Small Signal 500V 1KOhm

Manufacturer

Supertex

Datasheet

1.LND250K1-G.pdf (3 pages)

Specifications of LND250K1-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1000 Ohm @ 0 V

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.013 A

Power Dissipation

360 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

ESD gate protection

LND250

Device

●

N-Channel Depletion-Mode

DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

TO-236AB (SOT-23)

ISS

Package Option

-55

LND250K1-G

C to +150

300

Value

±20V

DGX

DSX

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

General Description

The LND250 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND250 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and ampliﬁcation.

●

NDEW

Tel: 408-222-8888

DSX

500

(V)

/BV

TO-236AB (SOT-23) (K1)

DGX

W = Code for Week Sealed

SOURCE

= “Green” Packaging

GATE

●

www.supertex.com

(max)

(KΩ)

DS(ON)

1.0

DRAIN

LND250

(min)

(mA)

1.0

DSS

Related parts for LND250K1-G

LND250K1-G Summary of contents

Page 1

... Supertex’s lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current ISS sources, voltage ramp generation and ampliﬁcation. Package Option TO-236AB (SOT-23) LND250K1-G Pin Conﬁguration Value BV Product Marking DSX BV DGX ± ...

Page 2

... GS 2.0 3 25V 1.0MHz 0.5 1 25V µ 1.0mA 25Ω GEN 1 0 -10V -10V PULSE L GENERATOR R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com LND250 I I † DR DRM (mA) (mA 1.0mA D = 100nA D = 100nA 450V DS = 125 25V = 0.5mA = 0.5mA = 1.0mA = 1.0mA SD = 1.0mA SD OUTPUT ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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