LND250K1-G Supertex, LND250K1-G Datasheet - Page 2

• Manufacturer Part Number: LND250K1-G
• Description: MOSFET Small Signal 500V 1KOhm
• Manufacturer: Supertex

Specifications of LND250K1-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1000 Ohm @ 0 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.013 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔV
ΔR
† I
V
R
BV
I
1.
2.
Sym
t
C
C
t
GS(OFF)
D(OFF)
C
d(OFF)
I
I
G
V
TO-236AB (SOT-23)
DS(ON)
d(ON)
GS(OFF)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
t
ISS
SD
rr
DSX
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
Drain-to-source breakdown voltage
Gate-to-source off voltage
Change in V
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
-10V
V
0V
0V
DD
GS(OFF)
DS(ON)
10%
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
90%
●
(mA)
13
I
t
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
r
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
90%
t
d(OFF)
C unless otherwise specified)
t
(OFF)
(pulsed)
(mA)
30
I
D
t
90%
F
10%
Power Dissipation
1000 2000
2
Min
-1.0
500
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.36
A
(W)
= 25
0.09
0.45
Typ
850
200
7.5
2.0
0.5
0.1
1.3
GENERATOR
-
-
-
-
-
-
-
-
-
O
PULSE
C
●
1000
Tel: [phone]
INPUT
R
Max
-3.0
100
100
100
5.0
3.0
1.2
3.5
1.0
0.9
10
GEN
-
-
-
-
-
-
-
mV/
mmho V
Units
(
%/
O
200
mA
C/W)
nA
nA
µA
pF
θ
µs
ns
V
V
Ω
V
jc
O
O
C
C V
●
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 1.0mA,
O
350
C/W)
θ
= -10V, I
= 25V, I
= 25V, I
= ± 20V, V
= -10V, V
= 0.8V Max Rating,
= -10V, T
= 0V, V
= 0V, I
= 0V, I
= 0V, I
= -10V,
= 25V,
= 25V,
= -10V, I
= -10V, I
ja
= 25Ω
V
R
DD
L
D
D.U.T.
D
D
DS
OUTPUT
D
D
= 0.5mA
= 0.5mA
= 1.0mA
D
SD
SD
A
= 100nA
= 100nA
(mA)
DS
= 25V
I
13
= 1.0mA
= 125
DS
DR
= 1.0mA
= 1.0mA
= 450V
= 0V
LND250
O
C
I
(mA)
DRM
30
†