PSMN014-40YS,115 NXP Semiconductors, PSMN014-40YS,115 Datasheet - Page 12
PSMN014-40YS,115
Manufacturer Part Number
PSMN014-40YS,115
Description
MOSFET N-CH 40V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN014-40YS115.pdf
(15 pages)
Specifications of PSMN014-40YS,115
Input Capacitance (ciss) @ Vds
702pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5578-2
NXP Semiconductors
8. Revision history
Table 7.
PSMN014-40YS
Product data sheet
Document ID
PSMN014-40YS v.3
Modifications:
PSMN014-40YS v.2
Revision history
20100526
Release date
20101025
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 25 October 2010
Data sheet status
Product data sheet
Objective data sheet
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Change notice
-
-
PSMN014-40YS
Supersedes
PSMN014-40YS v.2
PSMN014-40YS v.1
© NXP B.V. 2010. All rights reserved.
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