PSMN014-40YS,115 NXP Semiconductors, PSMN014-40YS,115 Datasheet - Page 9
![MOSFET N-CH 40V LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN014-40YS,115
Manufacturer Part Number
PSMN014-40YS,115
Description
MOSFET N-CH 40V LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN014-40YS115.pdf
(15 pages)
Specifications of PSMN014-40YS,115
Input Capacitance (ciss) @ Vds
702pF @ 20V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5578-2
NXP Semiconductors
PSMN014-40YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
GS
30
25
20
15
10
10
5
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
6.5
20
3
40
6
8V
7
32V
60
9
8
V
V
GS
DS
80
12
All information provided in this document is subject to legal disclaimers.
003aad303
(V) = 20
003aad306
= 20V
Q
I
D
G
(A)
(nC)
15
10
Rev. 03 — 25 October 2010
100
15
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN014-40YS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
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003aad307
(V)
C
C
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iss
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