BUK9Y58-75B,115 NXP Semiconductors, BUK9Y58-75B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y58-75B,115
• Description: MOSFET N-CH 75V 20.73A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y58-75B,115

• Input Capacitance (ciss) @ Vds: 1137pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 20.73A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Power - Max: 60.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5529-2

NXP Semiconductors
BUK9Y58-75B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
D
50
40
30
20
10
20
15
10
0
5
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
2
10
4
V
GS
6
(V) = 10
20
All information provided in this document is subject to legal disclaimers.
8
I
D
003aac969
003aac974
V
(A)
DS
(V)
3.6
3.2
2.4
3
2.6
5
4
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
(A)
DSon
I
D
160
120
80
40
20
15
10
5
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
2.6
3
N-channel TrenchMOS logic level FET
10
1
T
j
= 175 °C
3.2
20
BUK9Y58-75B
3.6
2
30
T
V
j
GS
= 25 °C
5
3
© NXP B.V. 2010. All rights reserved.
40
10
(V) = 15
003aac973
003aac970
V
GS
I
D
(A)
(V)
50
4
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