BUK9Y58-75B,115 NXP Semiconductors, BUK9Y58-75B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK9Y58-75B,115
• Description: MOSFET N-CH 75V 20.73A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y58-75B,115

• Input Capacitance (ciss) @ Vds: 1137pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 20.73A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10.7nC @ 5V
• Power - Max: 60.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5529-2

NXP Semiconductors
BUK9Y58-75B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
= 14 V
4
(A)
8
I
S
100
80
60
40
20
V
0
0.2
DS
All information provided in this document is subject to legal disclaimers.
Q
003aac975
= 60 V
G
(nC)
12
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
1
C
10
10
10
10
4
3
2
T
10
as a function of drain-source voltage; typical
values.
j
= 25 °C
-1
003aac971
V
SD
(V)
N-channel TrenchMOS logic level FET
1.4
1
BUK9Y58-75B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac968
C
C
C
(V)
oss
rss
iss
10
2
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