BUK763R6-40C,118 NXP Semiconductors, BUK763R6-40C,118 Datasheet - Page 5

• Manufacturer Part Number: BUK763R6-40C,118
• Description: MOSFET N-CH 40V 100A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK763R6-40C,118

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5295-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK763R6-40C
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
0.1
0.05
0.02
single pulse
δ = 0.5
0.2
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
-5
Conditions
see
mounted on printed circuit board;
minimum footprint; SOT404 package
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 4
Rev. 04 — 16 June 2010
10
-3
N-channel TrenchMOS standard level FET
10
-2
BUK763R6-40C
Min
-
-
10
P
-1
t
p
Typ
-
-
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
δ =
003aac590
Max
0.74
50
t
T
p
t
1
Unit
K/W
K/W
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