BUK7Y08-40B,115 NXP Semiconductors, BUK7Y08-40B,115 Datasheet - Page 4
![MOSFET N-CH 30V 75A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
BUK7Y08-40B,115
Manufacturer Part Number
BUK7Y08-40B,115
Description
MOSFET N-CH 30V 75A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B,115
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5511-2
NXP Semiconductors
BUK7Y08-40B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
100
75
50
25
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
(1)
50
100
(A)
I
AL
10
10
10
-1
150
2
1
10
-3
All information provided in this document is subject to legal disclaimers.
T
003aac505
mb
(°C)
200
10
Rev. 03 — 7 April 2010
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
N-channel TrenchMOS standard level FET
(1)
(2)
(3)
AL
003aac485
(ms)
10
50
BUK7Y08-40B
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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