BUK7Y08-40B,115 NXP Semiconductors, BUK7Y08-40B,115 Datasheet - Page 8
![MOSFET N-CH 30V 75A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
BUK7Y08-40B,115
Manufacturer Part Number
BUK7Y08-40B,115
Description
MOSFET N-CH 30V 75A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y08-40B115.pdf
(14 pages)
Specifications of BUK7Y08-40B,115
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
36.3nC @ 10V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5511-2
NXP Semiconductors
BUK7Y08-40B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
T
003aab851
T
j
j
(°C)
(°C)
03aa32
180
180
Rev. 03 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
DSON
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
20
15
10
5
0
gate-source voltage
of gate-source voltage; typical values.
0
4
N-channel TrenchMOS standard level FET
8
2
min
BUK7Y08-40B
12
typ
4
16
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad556
V
GS
(V)
03aa35
(V)
20
6
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