BUK6226-75C,118 NXP Semiconductors, BUK6226-75C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6226-75C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6226-75C,118

• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6226-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
I
D
D
80
60
40
20
50
40
30
20
10
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
2
T
j
= 175 °C
2
V
…continued
GS
(V) = 8.0
3
4
T
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
4
GS
003aae862
003aae861
V
(V)
DS
(V)
3.6
5.0
3.8
3.3
5.5
4.5
4.0
Rev. 01 — 4 October 2010
5
6
Conditions
I
see
I
V
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
Fig 6.
Fig 8.
DS
/dt = -100 A/µs;
= 0 V; T
(mΩ)
R
= 25 V
(S)
g
DSon
fs
50
40
30
20
10
80
60
40
20
0
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
j
= 25 °C;
10
5
20
BUK6226-75C
Min
-
-
-
N-channel TrenchMOS FET
10
30
Typ
0.8
42
74
15
© NXP B.V. 2010. All rights reserved.
40
V
003aae863
003aae867
GS
I
D
Max
1.2
-
-
(V)
(A)
50
20
Unit
V
ns
nC
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