BUK6226-75C,118 NXP Semiconductors, BUK6226-75C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK6226-75C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6226-75C,118

• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6226-75C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
(mΩ)
R
GS(th)
(V)
DSon
100
75
50
25
4
3
2
1
0
0
-60
junction temperature
of drain current; typical values
Gate-source threshold voltage as a function of
0
V
GS
(V) = 3.8
20
0
4.0
max
min
typ
60
40
4.5
120
60
All information provided in this document is subject to legal disclaimers.
003aad805
003aae865
I
T
D
j
5.0
(A)
(°C)
8.0
180
80
Rev. 01 — 4 October 2010
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
D
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
3
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
1
0
min
BUK6226-75C
N-channel TrenchMOS FET
60
2
typ
max
120
3
© NXP B.V. 2010. All rights reserved.
003aad806
V
003aad804
T
GS
j
(°C)
(V)
180
4
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