BUK6507-75C,127 NXP Semiconductors, BUK6507-75C,127 Datasheet - Page 4

• Manufacturer Part Number: BUK6507-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6507-75C,127

• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6507-75C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
10
D
10
10
120
100
10
80
60
40
20
-1
3
2
1
0
10
mounting base temperature
V
(1) capped at 100 A due to package
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
GS
(1)
= 25°C; I
≥ 10 V
50
DM
is a single pulse
100
Limit R
1
DSon
150
= V
T
All information provided in this document is subject to legal disclaimers.
DS
003aae543
mb
/ I
(°C)
D
200
Rev. 02 — 4 October 2010
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
2
100 ms
t
100 μ s
10 ms
1 ms
p
=10 μ s
BUK6507-75C
100
N-channel TrenchMOS FET
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
mb
003aae544
03aa16
(°C)
10
200
3
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