PH1225AL,115 NXP Semiconductors, PH1225AL,115 Datasheet

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PH1225AL,115

Manufacturer Part Number
PH1225AL,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PH1225AL,115

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for
computing use only
Table 1.
[1]
Symbol Parameter
V
I
P
T
Avalanche ruggedness
E
Dynamic characteristics
Q
Q
Static characteristics
R
D
j
DS
tot
DS(AL)S
GD
G(tot)
DSon
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
For computing use only
Continuous current is limited by package.
PH1225AL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Rev. 01 — 14 October 2009
drain-source voltage T
drain current
total power
dissipation
junction temperature
non-repetitive
drain-source
avalanche energy
gate-drain charge
total gate charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
I
R
V
V
see
V
T
V
T
D
j
mb
mb
j
j
GS
GS
DS
GS
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
= 100 A; V
Figure 1
Figure 12
= 25 °C; V
= 25 °C; see
= 12 V;
= 10 V; T
= 50 Ω; unclamped
= 4.5 V; I
= 10 V; I
= 10 V; I
j
sup
D
D
≤ 150 °C
D
j(init)
and
GS
= 15 A;
= 15 A;
= 25 A;
Figure 10
≤ 25 V;
Figure 11
Figure 2
= 10 V;
= 25 °C;
13
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
11.9
50.6
-
0.9
Max
25
100
121
150
677
-
-
1.6
1.2
Unit
V
A
W
°C
mJ
nC
nC
mΩ
mΩ

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PH1225AL,115 Summary of contents

Page 1

PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PH1225AL LFPAK2 Plastic single-ended surface-mounted package (LFPAK2); 4 leads 4. Limiting values Table 4. ...

Page 3

... NXP Semiconductors 300 I D (A) 200 100 100 Fig 1. Continuous drain current as a function of mounting base temperature ( Limit dson Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH1225AL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base (j-mb) δ = 0.5 (K/W) -1 0.2 10 0.1 0.05 0. single shot - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH1225AL_1 Product data sheet N-channel 25 V 1.2 mΩ ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R gate resistance G Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q pre-threshold ...

Page 6

... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge r [1] Tested to JEDEC standards where applicable. 100 150 ° Fig 5. Transfer characteristics: drain current as a function of gate-source voltage; typical values 120 3.5 ...

Page 7

... NXP Semiconductors (th) (V) max 2 typ min Fig 9. Gate-source threshold voltage as a function of junction temperature 2 a 1.5 1 0.5 0 − Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature PH1225AL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK ...

Page 8

... NXP Semiconductors ( Fig 13. Gate-source voltage as a function of gate charge; typical values Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PH1225AL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK 003aad134 (pF 12V 120 10 Q (nC) G Fig 14 ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (LFPAK2); 4 leads Dimensions Unit max 1.10 0.15 0.50 4.41 mm nom 0.85 min 0.95 0.00 0.35 3.62 Note 1. Plastic or metal protrusions of 0.15 mm per side are not included. Outline version IEC SOT1023 Fig 16. Package outline SOT1023 (LFPAK2) ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PH1225AL_1 20091014 PH1225AL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Rev. 01 — 14 October 2009 PH1225AL Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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