BUK663R5-55C,118 NXP Semiconductors, BUK663R5-55C,118 Datasheet - Page 5

• Manufacturer Part Number: BUK663R5-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R5-55C,118

• Input Capacitance (ciss) @ Vds: 11516pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 191nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK663R5-55C
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10 −1
10
10
−1
−2
−3
10
1
3
2
1
10 −
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
1
δ = 0.5
0.05
0.02
single shot
0.1
0.2
Parameter
thermal resistance from
junction to mounting base
10
−5
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
10
1
−4
DS
/ I
Rev. 2 — 23 December 2010
D
Conditions
see
Figure 5
10
−3
N-channel TrenchMOS intermediate level FET
DC
10
10
−2
BUK663R5-55C
Min
-
10
V
P
DS
−1
(V)
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s )
t
100 ms
003aae386
003aae387
p
10 ms
100 μs
δ =
=10 μs
1 ms
Max
0.57
t
T
t
p
10
1
2
Unit
K/W
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