BUK663R5-55C,118 NXP Semiconductors, BUK663R5-55C,118 Datasheet - Page 9

• Manufacturer Part Number: BUK663R5-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK663R5-55C,118

• Input Capacitance (ciss) @ Vds: 11516pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 191nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK663R5-55C
Product data sheet
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
5
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae394
C
C
(V)
C
oss
rss
iss
Rev. 2 — 23 December 2010
10
2
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of
(A)
V
I
(V)
S
100
GS
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
0.3
50
V
DS
T
= 14 V
j
= 175 °C
BUK663R5-55C
100
0.6
150
0.9
T
j
© NXP B.V. 2010. All rights reserved.
V
= 25 °C
Q
DS
V
003aae393
003aae397
G
SD
= 40 V
(nC)
(V)
200
1.2
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