BUK661R9-40C,118 NXP Semiconductors, BUK661R9-40C,118 Datasheet - Page 2
![MOSFET N-CH TRENCH D2PACK](/photos/16/4/160468/sot428_sml.jpg)
BUK661R9-40C,118
Manufacturer Part Number
BUK661R9-40C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK661R9-40C118.pdf
(15 pages)
Specifications of BUK661R9-40C,118
Input Capacitance (ciss) @ Vds
15100pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK661R9-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK661R9-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
Drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 120 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
N-channel TrenchMOS intermediate level FET
DS
sup
GS
= 32 V;
≤ 40 V;
Figure
= 10 V;
13;
Graphic symbol
BUK661R9-40C
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
72
Version
SOT404
Max Unit
1.02 J
-
2 of 15
nC