BUK661R9-40C,118 NXP Semiconductors, BUK661R9-40C,118 Datasheet - Page 8
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BUK661R9-40C,118
Manufacturer Part Number
BUK661R9-40C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK661R9-40C118.pdf
(15 pages)
Specifications of BUK661R9-40C,118
Input Capacitance (ciss) @ Vds
15100pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
BUK661R9-40C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
D
DSon
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
10
V
1
GS
(V) = 3.3
min
20
2
typ
30
max
3.4
3
3.6
40
All information provided in this document is subject to legal disclaimers.
003aad806
V
003aae253
I
GS
D
(A)
(V)
3.8
4.0
5.0
10
50
Rev. 1 — 18 August 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
BUK661R9-40C
max @1mA
min @2.5mA
typ @1mA
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aad793
T
j
j
(°C)
(°C)
180
180
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