BUK663R7-75C,118 NXP Semiconductors, BUK663R7-75C,118 Datasheet - Page 11
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BUK663R7-75C,118
Manufacturer Part Number
BUK663R7-75C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK663R7-75C118.pdf
(14 pages)
Specifications of BUK663R7-75C,118
Input Capacitance (ciss) @ Vds
15450pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
234nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
8. Revision history
Table 7.
BUK663R7-75C
Product data sheet
Document ID
BUK663R7-75C v.2
Modifications:
BUK663R7-75C v.1
Revision history
20100706
Release date
20100915
•
Status changed from objective to product data sheet.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2010
Data sheet status
Product data sheet
Objective data sheet
Change notice
-
-
BUK663R7-75C
N-channel TrenchMOS FET
Supersedes
BUK663R7-75C v.1
-
© NXP B.V. 2010. All rights reserved.
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