BUK663R7-75C,118 NXP Semiconductors, BUK663R7-75C,118 Datasheet - Page 9
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BUK663R7-75C,118
Manufacturer Part Number
BUK663R7-75C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK663R7-75C118.pdf
(14 pages)
Specifications of BUK663R7-75C,118
Input Capacitance (ciss) @ Vds
15450pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
234nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
BUK663R7-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aae451
C
C
C
(V)
iss
oss
rss
Rev. 2 — 15 September 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
I
(V)
S
GS
120
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
50
0.3
T
j
= 175 °C
BUK663R7-75C
100
14V
N-channel TrenchMOS FET
0.6
150
V
DS
0.9
= 60V
T
j
© NXP B.V. 2010. All rights reserved.
200
= 25 °C
003aae452
V
003aae425
Q
SD
G
(nC)
(V)
250
1.2
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