STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet - Page 3

MOSFET N-CH 30V 11A POWERFLAT

STL11N3LLH6

Manufacturer Part Number
STL11N3LLH6
Description
MOSFET N-CH 30V 11A POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STL11N3LLH6

Input Capacitance (ciss) @ Vds
1690pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Power - Max
2W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
11 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
17 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11099-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL11N3LLH6
Manufacturer:
EPCOS
Quantity:
1 400
Part Number:
STL11N3LLH6
Manufacturer:
ST
0
Part Number:
STL11N3LLH6
Manufacturer:
ST
Quantity:
20 000
STL11N3LLH6
1
Electrical ratings
Table 2.
1. The value is rated according R
2. Pulse width limited by safe operating area
3. The value is rated according R
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
2. Steady state
Table 4.
R
R
Symbol
P
P
Symbol
R
Symbol
I
thj-pcb
thj-pcb
I
TOT
TOT
DM
V
I
thj-case
V
T
D
D
E
T
I
GS
DS
stg
AV
(1)
AS
(1)
J
(2)
(3)
(1)
(2)
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance
Avalanche data
Thermal resistance junction-case (drain) (steady state)
Thermal resistance junction-pcb
Thermal resistance junction-pcb
Not-repetitive avalanche current,
(pulse width limited by Tj max.)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
thj-pcb
thj-c
Doc ID 17755 Rev 1
C
C
D
Parameter
= 25 °C
= 25 °C
Parameter
Parameter
GS
= I
AV
= 0)
, V
C
C
DD
= 25 °C
= 100 °C
= 24 V)
-55 to 150
Value
Value
Value
± 20
0.03
TBD
TBD
42.8
63.5
6.9
30
11
44
50
2.5
2
Electrical ratings
W/°C
°C/W
°C/W
°C/W
Unit
Unit
Unit
°C
mJ
W
W
V
V
A
A
A
A
3/10

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