STL11N3LLH6 STMicroelectronics, STL11N3LLH6 Datasheet - Page 7

• Manufacturer Part Number: STL11N3LLH6
• Description: MOSFET N-CH 30V 11A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL11N3LLH6

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 2W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11099-2

STL11N3LLH6
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 17755 Rev 1
Package mechanical data
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®