BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet
BLF6G13L-250P,112
Specifications of BLF6G13L-250P,112
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BLF6G13L-250P,112 Summary of contents
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... BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Typical RF performance at T Mode of operation CW 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage 100 mA: ...
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... BLF6G13L-250P BLF6G13LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged LDMOST ceramic package ...
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... D 6.1 Ruggedness in class-AB operation The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Thermal characteristics Parameter thermal resistance from junction to case T DC characteristics C; per section unless otherwise specified. ...
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... NXP Semiconductors 7. Application information 7.1 CW Fig 1. 7.2 2-Carrier CW Fig 2. BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P (dB) 16 η 100 100 mA Power gain and drain efficiency as function of load power; typical values (dB) 16 η 100 100 mA; carrier spacing = 100 kHz Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
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... Power gain as a function of load power; typical values 7.3 Impedance information Table 8. Typical values valid per section unless otherwise specified. f MHz 1200 1300 1400 Fig 5. BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P 001aan870 150 200 250 P (W) L Fig 4. Typical impedance Z Z optimized for G ...
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... C12, C13 C14, C15, C32, C34 C16, C17 C20, C21, C22, C23 C40, C41 C42, C43, C44, C45 C24 C25 C26, C27, c28, C29, C30, C31, C33, C35 C36, C37 C46, C47 BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P C14 C12 C11 C10 ...
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... SR2 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 200B or capacitor of same quality. BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P List of components …continued Figure 6. Description SMD resistor 0603 COAX COAX All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 7. Package outline SOT1121A BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P scale D ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 8. Package outline SOT1121B BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P scale ...
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... VSWR 11. Revision history Table 11. Revision history Document ID BLF6G13L-250P_6G13LS-250P v.2 Modifications: BLF6G13L-250P_6G13LS-250P v.1 BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Abbreviations Description Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mount Device Voltage Standing-Wave Ratio Release date ...
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... BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 21 March 2011 Document identifier: BLF6G13L-250P_6G13LS-250P ...