BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet - Page 10

• Manufacturer Part Number: BLF6G13L-250P,112
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G13L-250P,112

• Voltage - Rated: 100V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.3GHz
• Gain: 15dB
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 100V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 15@50VdB
• Package Type: CDFM
• Pin Count: 5
• Drain Source Resistance (max): 340@6Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF6G13L-250P_6G13LS-250P
Objective data sheet
CAUTION
Document ID
BLF6G13L-250P_6G13LS-250P v.2
Modifications:
BLF6G13L-250P_6G13LS-250P v.1
Revision history
Table 10.
Acronym
CW
LDMOS
LDMOST
RF
SMD
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
BLF6G13L-250P; BLF6G13LS-250P
Release date
20110321
20101102
All information provided in this document is subject to legal disclaimers.
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Description
Continuous Wave
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mount Device
Voltage Standing-Wave Ratio
Table 1 on page
Section 1.2 on page
Table 5 on page
Table 6 on page
Section 7 on page
Rev. 2 — 21 March 2011
Data sheet status
Objective data sheet
Objective data sheet
1: Some values have been changed
3: The value for R
3: The data concerning g
4: This section has been added
1: Some values have been changed
th(j-c)
Change notice
-
-
has been changed
fs
has been updated
Power LDMOS transistor
Supersedes
BLF6G13L-250P_
6G13LS-250P v.1
-
© NXP B.V. 2011. All rights reserved.
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