BLF6G13LS-250P,112 NXP Semiconductors, BLF6G13LS-250P,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G13LS-250P,112
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G13LS-250P,112

• Voltage - Rated: 100V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.3GHz
• Gain: 15dB
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

NXP Semiconductors
7. Application information
BLF6G13L-250P_6G13LS-250P
Objective data sheet
7.1 CW
7.2 2-Carrier CW
Fig 1.
Fig 2.
V
Power gain and drain efficiency as function of load power; typical values
V
Power gain and drain efficiency as function of load power; typical values
DS
DS
= 50 V; I
= 50 V; I
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
Dq
Dq
(dB)
(dB)
G
G
= 100 mA.
= 100 mA; carrier spacing = 100 kHz.
p
p
Rev. 2 — 21 March 2011
19
16
13
10
19
16
13
10
0
0
50
G
η
D
p
G
η
100
D
p
100
150
200
200
250
P
P
L
001aan868
001aan869
300
L
(W)
(W)
350
300
Power LDMOS transistor
60
45
30
15
60
45
30
15
(%)
(%)
η
η
D
D
© NXP B.V. 2011. All rights reserved.
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