BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 3

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1998 Oct 21
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
NPN wideband transistor
th j-s
(mW)
P tot
s
500
400
300
200
100
is the temperature at the soldering point of the emitter pins.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
40
PARAMETER
80
120
T s (°C)
PARAMETER
MGR623
160
open base
open collector
T
open emitter
s
 60 C; note 1; see Fig.2
3
CONDITIONS





65

MIN.
VALUE
250
14.5
4.5
1
250
360
+150
150
Product specification
MAX.
BFG480W
UNIT
K/W
V
V
V
mA
mW
C
C
UNIT