BFG480W,135 NXP Semiconductors, BFG480W,135 Datasheet - Page 8

• Manufacturer Part Number: BFG480W,135
• Description: TRANS RF NPN 21GHZ 4.5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 250 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1998 Oct 21
handbook, full pagewidth
handbook, full pagewidth
NPN wideband transistor
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 2 V.
= 2 V; Z
Fig.11 Common emitter reverse transmission coefficient (S
o
= 50 
Fig.12 Common emitter output reflection coefficient (S
180°
180°
0.5
0
−135°
−135°
0.4
135°
135°
0.2
0.2
0.2
0.3
3 GHz
0.5
0.5
0.2
0.5
0.1
40 MHz
−90°
−90°
90°
90°
8
1
1
1
3 GHz
2
40 MHz
2
2
5
22
−45°
45°
−45°
45°
); typical values.
12
5
5
MGR632
); typical values.
MGR633
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG480W