BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet - Page 2

• Manufacturer Part Number: BFQ67W,135
• Description: TRANS NPN 10V 20MA 8GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
It is designed for wideband
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
excellent reliability
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
T
I
T
I
open emitter
open base
open collector
up to T
base
emitter
collector
C
C
c
c
amb
amb
= 15 mA; V
= 5 mA; V
= 15 mA; V
= 15 mA; V
Code: V2
DESCRIPTION
= 25 C
= 25 C
s
s
= 118 C; note 1
= 118 C; note 1
2
CONDITIONS
CONDITIONS
CE
CE
CE
CE
= 8 V; f = 1 GHz
= 8 V; f = 1 GHz;
= 5 V; T
= 8 V; f = 2 GHz;
j
= 25 C
handbook, 2 columns




60








65

MIN.
MIN.
Top view
Fig.1 SOT323.




100
8
13
1.3
Product specification
TYP.
1
20
10
2.5
50
300
150
175
MAX.
3
BFQ67W
20
10
50
300




MAX.
MBC870
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT