BFQ67W,135 NXP Semiconductors, BFQ67W,135 Datasheet - Page 4

• Manufacturer Part Number: BFQ67W,135
• Description: TRANS NPN 10V 20MA 8GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFQ67W,135

• Package / Case: SC-70, SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistor
I
Fig.4
C
(mW)
P
C re
(pF)
= 0; f = 1 MHz.
tot
400
300
200
100
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
50
4
100
8
150
V
CB
T
MRC045- 1
s
MRC039
(
(V)
o
C)
200
12
4
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.3
V
Fig.5
h
CE
CE
T f
FE
120
= 5 V; T
= 8 V; f = 2 GHz; T
80
40
10
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
10
amb
20
= 25 C.
20
40
Product specification
30
I
C
I
BFQ67W
(mA)
C
MBB301
(mA)
MBB303
60
40