BFU730F,115 NXP Semiconductors, BFU730F,115 Datasheet - Page 54
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BFU730F,115
Manufacturer Part Number
BFU730F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU730F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
55GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Power - Max
197mW
Dc Current Gain (hfe) (min) @ Ic, Vce
205 @ 2mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFU730F,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
2.10
NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort,
enables high-power amplifiers that deliver very high efficiency in next-generation wireless
communication systems.
Features
` Power density that is up to five times higher than Si LDMOS
` 50 V operation
` High gain
` High efficiency
` High reliability
` Low parasitics
Benefits
` High frequency combined with high power
` Broadband operation that lets a single power amplifier
` Enabling technology for next-generation, high-power, Switch
` Lowers system costs and operational expenditures
` Ideal for tower-top base stations
Applications
` Cellular base stations
` WiMAX
` Broadcast
` Radar
Collaborating with United Monolithic Semiconductors and
the Fraunhofer Institute for Applied Solid State Physics, NXP
Semiconductors is developing a gallium-nitride (GaN) process
technology that boosts performance of next-generation RF
power amplifiers.
The new GaN process, with its high frequency combined
with high power, puts NXP in the ideal position of being able
to support future applications while continuing to evolve its
well-established LDMOS technology.
The GaN technology delivers numerous benefits to
manufacturers of infrastructure equipment. Using the GaN
technology in a transmitter represents a significant cost savings
in system manufacturing, along with major improvements in
system performance and flexibility.
56
function at multiple frequencies
Mode Power Amplifier (SMPA) architectures
NXP Semiconductors RF Manual 14
Boost efficiency and lower system cost in wireless infrastructure with GaN
th
edition
Most of today’s base station power amplifiers are limited to
specific applications. The new GaN-based technology lets
operators use a “universal transmitter” to switch between
systems and frequencies, so they can instantly meet demands
in the base station’s coverage area. GaN transistors enable
much more efficient power amplifiers and as a result drive
down the operational costs of telecom operators.
GaN transistors can operate at much higher junction
temperatures than Si- and GaAs-based devices, so GaN is
an ideal candidate for environments with reduced cooling
capabilities, such as tower-top base stations. Also, with its high
power densities, GaN has the potential to expand into other
areas, including high-power broadcast applications, where
solid-state power amplifiers built with vacuum tubes are still
the norm.
NXP’s first GaN broadband power amplifiers are expected
to be available in 2010, with Switch Mode Power Amplifiers
(SMPAs) following quickly thereafter.
Assembly of GaN power bar in standard ceramic package
Performance (targets)
Saturated output power at 50 V
Frequency
Maximum PAE
Linear power gain
2C-WCDMA linear efficiency with DPD
100 W
2.2 GHz
68%
19 dB
40% at –52 dBc IM3 at 8 dB OPBO