BFU730F NXP Semiconductors, BFU730F Datasheet
BFU730F
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BFU730F Summary of contents
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... BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices ...
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... °C amb = 1. Γ S opt = 2 12 Ω °C amb = Maximum Stable Gain (MSG). p(max) Simplified outline BFU730F Max Unit 10 V 2 197 mW 555 - fF - GHz - dBm Graphic symbol mbb159 Version SOT343F © ...
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... P tot (mW) 200 150 100 Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Min Max - 10 - 2 ≤ 90 °C ...
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... GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz GHz = 2 V; Γ mA °C T amb f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz GHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F Min Typ 205 380 - 206 - 442 - °C ...
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... GHz = MSG. p(max) 001aam853 500 ( (2) 400 (3) (4) (5) 300 (6) (7) 200 (8) (9) 100 (10 (V) CE Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F Min Typ = 2 °C amb - 12 11.5 - 12 °C amb - 26.5 - 26 ° ...
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... G (dB) (2) MSG (3) 20 (4) ( All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F ° GHz amb Transition frequency as a function of collector current; typical values 001aam857 G p(max) ...
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... mA amb Gain as a function of frequency; typical values 2.0 min (dB) 1.5 1.0 0 ° mA amb frequency; typical values BFU730F 001aam859 MSG (GHz) 001aam861 (GHz) © NXP B.V. 2011. All rights reserved ...
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... JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 NPN wideband silicon germanium RF transistor detail 0.2 0.1 EUROPEAN PROJECTION BFU730F SOT343F X c ISSUE DATE 05-07-12 06-03-16 © NXP B.V. 2011. All rights reserved ...
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... NPN RF RKE SDARS UMTS WiMAX WLAN 10. Revision history Table 9. Revision history Document ID Release date BFU730F v.1 20110429 www.DataSheet4U.net BFU730F Product data sheet NPN wideband silicon germanium RF transistor Abbreviations Description Automatic Meter Reading Direct Broadcast Satellite Direct Current Dielectric Resonator Oscillator Frequency Modulation ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F © NXP B.V. 2011. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 BFU730F © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU730F All rights reserved. Date of release: 29 April 2011 Document identifier: BFU730F ...