BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 7
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BFU690F,115
Manufacturer Part Number
BFU690F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU690F115.pdf
(12 pages)
Specifications of BFU690F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
18GHz
Noise Figure (db Typ @ F)
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
Gain
15.5dB ~ 18.5dB
Power - Max
230mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
18 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
BFU690F
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
min
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0
0
10
0
V
Gain as a function of frequency; typical values
V
Minimum noise figure as a function of
collector current; typical values
CE
CE
|S21|
= 1 V; I
= 2 V; T
15
MSG
2
2
C
20
amb
= 10 mA; T
= 25 C.
4
25
G
amb
p(max)
30
6
= 25 C.
35
I
All information provided in this document is subject to legal disclaimers.
8
C
001aam838
001aam840
f (GHz)
40
(mA)
(1)
(2)
(3)
Rev. 1 — 16 December 2010
10
45
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
G
min
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0
0
0
0
V
Gain as a function of frequency; typical values
V
frequency; typical values
CE
CE
|S21|
= 1 V; I
= 2 V; I
MSG
2
2
NPN wideband silicon RF transistor
C
C
= 60 mA; T
= 15 mA; T
1
4
G
p(max)
amb
amb
6
= 25 C.
= 25 C.
2
BFU690F
© NXP B.V. 2010. All rights reserved.
f (GHz)
8
001aam839
001aam841
f (GHz)
10
3
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