PZ1418B30U,114 NXP Semiconductors, PZ1418B30U,114 Datasheet - Page 3
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PZ1418B30U,114
Manufacturer Part Number
PZ1418B30U,114
Description
TRANS SOT443A
Manufacturer
NXP Semiconductors
Datasheet
1.PZ1418B30U114.pdf
(12 pages)
Specifications of PZ1418B30U,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.6GHz
Power - Max
45W
Current - Collector (ic) (max)
4A
Mounting Type
Flange
Package / Case
SOT-443A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Gain
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Nov 13
handbook,
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CEO
CES
EBO
tot
NPN microwave power transistor
SYMBOL
P tot
(W)
Fig.2
50
40
30
20
10
0
0
Power derating curve as a function of
mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
50
PARAMETER
100
150
T mb ( C)
MGD970
200
open emitter
open base
R
open collector
T
mb
BE
= 0
3
75 C
CONDITIONS
65
MIN.
PZ1418B30U
40
15
35
3
4
45
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT