PZ1418B30U,114 NXP Semiconductors, PZ1418B30U,114 Datasheet - Page 3

• Manufacturer Part Number: PZ1418B30U,114
• Description: TRANS SOT443A
• Manufacturer: NXP Semiconductors

Specifications of PZ1418B30U,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.6GHz
• Power - Max: 45W
• Current - Collector (ic) (max): 4A
• Mounting Type: Flange
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Nov 13
handbook,
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CEO
CES
EBO
tot
NPN microwave power transistor
SYMBOL
P tot
(W)
Fig.2
50
40
30
20
10
0
0
Power derating curve as a function of
mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
50
PARAMETER
100
150
T mb ( C)
MGD970
200
open emitter
open base
R
open collector
T
mb
BE
= 0
3
75 C
CONDITIONS
65
MIN.
PZ1418B30U
40
15
35
3
4
45
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT