PZ1418B30U,114 NXP Semiconductors, PZ1418B30U,114 Datasheet - Page 4

• Manufacturer Part Number: PZ1418B30U,114
• Description: TRANS SOT443A
• Manufacturer: NXP Semiconductors

Specifications of PZ1418B30U,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1.6GHz
• Power - Max: 45W
• Current - Collector (ic) (max): 4A
• Mounting Type: Flange
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. See “ Mounting recommendations in the General part of handbook SC19a” .
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
1997 Nov 13
handbook, full pagewidth
R
R
I
I
I
SYMBOL
mb
CBO
CES
EBO
SYMBOL
th j-mb
th mb-h
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
= 25 C unless otherwise specified.
1.4 to 1.8
(GHz)
f
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
r
= 10.
collector cut-off current
collector cut-off current
emitter cut-off current
input
50
V
(V)
28
CC
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
0.65
PARAMETER
mb
PARAMETER
= 25 C in a common base class B wideband amplifier.
6.5
2
4
typ. 35
(W)
P
27
L
5
12
21
4
4
typ. 8.4
V
V
V
V
(dB)
CB
CB
CE
EB
G
7.3
p
= 1.5 V; I
= 40 V; I
= 30 V; I
= 35 V; R
5
T
T
j
j
CONDITIONS
= 75 C
= 75 C; note 1
2
CONDITIONS
E
E
C
5.5
BE
= 0
= 0
= 0
= 0
typ. 45
8.5
2
(%)
38
C
0.65
100 pF
(ATC)
MGK064
output
10
5
50
200
50
PZ1418B30U
MAX.
see Figs 6 and 7
MAX.
Product specification
2.2
0.2
Z
( )
i
; Z
mA
mA
mA
L
A
K/W
K/W
UNIT
UNIT