NJX1675PDR2G ON Semiconductor, NJX1675PDR2G Datasheet - Page 2

• Manufacturer Part Number: NJX1675PDR2G
• Description: IC TRANS NPN/PNP COMP 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NJX1675PDR2G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz, 120MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1. FR-- 4 @ 100 mm
2. Dual heated values assume total power is the sum of two equally powered devices.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle  2%.
THERMAL CHARACTERISTICS
NPN ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
Total Device Dissipation (Note 1)
Thermal Resistance, Junction--to--Ambient (Note 1)
Junction and Storage Temperature Range
Delay (V
Rise (V
Storage (V
Fall (V
Collector -- Emitter Breakdown Voltage
Collector -- Base Breakdown Voltage
Emitter -- Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 4)
Collector -- Emitter Saturation Voltage (Note 4)
Base -- Emitter Saturation Voltage (Note 4)
Base -- Emitter Turn--on Voltage (Note 4)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= 1.0 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, I
= 10 mA, V
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 0.1 A, I
= 1.0 A, I
= 1.0 A, I
= 2.0 A, I
= 1.0 A, I
= 0.1 A, V
= 100 mA, V
CC
CC
= 30 Vdc, I
= 5.0 Vdc)
CC
= 30 V, I
T
Derate above 25C
= 30 V, I
CC
A
= 30 V, I
= 25C
= 30 V, I
B
B
B
B
B
CE
CE
CE
= 0.010 A)
= 0.100 A)
= 0.010 A)
= 0.200 A)
= 0.01 A)
CE
C
CE
CE
C
B
E
2
= 2.0 V)
= 2.0 V)
= 2.0 V)
C
E
= 750 mA, I
C
, 1 oz. copper traces, still air, t  10 sec.
= 2.0 V)
= 750 mA, I
= 0)
= 0)
= 0)
= 0)
EB
= 2.0 V)
= 5.0 V, f = 100 MHz)
= 750 mA, I
C
CB
= 750 mA, I
= 0.5 V, f = 1.0 MHz)
Characteristic
Characteristic
= 3.0 V, f = 1.0 MHz)
B1
B1
B1
= 15 mA)
= 15 mA)
B1
= 15 mA)
= 15 mA)
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
Symbol
I
CE(sat)
BE(sat)
Cibo
I
BE(on)
T
h
CBO
EBO
f
t
t
R
t
J
FE
t
T
d
s
r
f
P
, T
θJA
D
stg
Min
100
100
180
180
100
6.0
30
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--55 to +150
Max
2.0
16
62
0.008
0.044
0.080
0.082
0.780
0.650
Typ
400
350
340
320
320
40
--
--
--
--
--
--
--
--
--
--
0.011
0.060
0.115
0.115
0.900
0.750
Max
450
100
100
780
110
0.1
0.1
--
--
--
--
--
--
--
--
--
mW/C
C/W
Unit
C
W
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
V
V
V