NJX1675PDR2G ON Semiconductor, NJX1675PDR2G Datasheet - Page 3

IC TRANS NPN/PNP COMP 30V 8SOIC

NJX1675PDR2G

Manufacturer Part Number
NJX1675PDR2G
Description
IC TRANS NPN/PNP COMP 30V 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NJX1675PDR2G

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 1A, 2V
Power - Max
2W
Frequency - Transition
100MHz, 120MHz
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NJX1675PDR2G
Manufacturer:
ON Semiconductor
Quantity:
1 750
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle  2%.
PNP ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
Delay (V
Rise (V
Storage (V
Fall (V
Collector -- Emitter Breakdown Voltage
Collector -- Base Breakdown Voltage
Emitter -- Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 4)
Collector -- Emitter Saturation Voltage (Note 4)
Base -- Emitter Saturation Voltage (Note 4)
Base -- Emitter Turn--on Voltage (Note 4)
Cutoff Frequency
Input Capacitance (V
Output Capacitance (V
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= --1.0 mAdc, I
= --10 mAdc, I
= --0.1 mAdc, I
= --10 mA, V
= --500 mA, V
= --1.0 A, V
= --2.0 A, V
= --0.1 A, I
= --1.0 A, I
= --1.0 A, I
= --2.0 A, I
= --1.0 A, I
= --0.1 A, V
= --100 mA, V
CC
CC
= --30 Vdc, I
= --5.0 Vdc)
CC
= --30 V, I
= --30 V, I
CC
= --30 V, I
= --30 V, I
B
B
B
B
B
CE
CE
CE
= --0.010 A)
= --0.100 A)
= --0.010 A)
= --0.200 A)
= --0.01 A)
CE
C
CE
CE
C
B
E
= --2.0 V)
= --2.0 V)
= --2.0 V)
E
C
= --750 mA, I
C
EB
= --2.0 V)
= 0)
= --750 mA, I
= 0)
= 0)
= 0)
= --2.0 V)
= --5.0 V, f = 100 MHz)
= --750 mA, I
CB
C
= --0.5 V, f = 1.0 MHz)
= --750 mA, I
Characteristic
= --3.0 V, f = 1.0 MHz)
B1
B1
B1
= --15 mA)
= --15 mA)
B1
= --15 mA)
= --15 mA)
(T
A
= 25C unless otherwise noted)
http://onsemi.com
3
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
I
CE(sat)
BE(sat)
Cibo
I
BE(on)
h
CBO
EBO
f
t
t
t
FE
t
T
d
s
r
f
--7.0
Min
100
100
180
150
100
--30
--30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--0.013
--0.075
--0.130
--0.135
--0.780
--0.660
Typ
380
340
300
230
120
250
50
--
--
--
--
--
--
--
--
--
--0.017
--0.095
--0.170
--0.170
--0.900
--0.750
Max
--0.1
--0.1
300
120
400
130
60
--
--
--
--
--
--
--
--
--
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
V
V
V

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