NJX1675PDR2G ON Semiconductor, NJX1675PDR2G Datasheet - Page 4

• Manufacturer Part Number: NJX1675PDR2G
• Description: IC TRANS NPN/PNP COMP 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NJX1675PDR2G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz, 120MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

700
600
500
400
300
200
100
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0
0.001
150C (2.0 V)
--55C (2.0 V)
Figure 1. Collector Emitter Saturation Voltage
--55C (5.0 V)
25C (2.0 V)
0.001
25C (5.0 V)
Figure 5. Base Emitter Turn- -On Voltage vs.
V
I
C
Figure 3. DC Current Gain vs. Collector
CE
/I
B
= +2.0 V
= 10
0.01
I
I
I
C
C
C
0.01
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
vs. Collector Current
Collector Current
150C
--55C
25C
Current
0.1
0.1
0.1
150C (5.0 V)
NPN TYPICAL CHARACTERISTICS
1
1
150C
1
http://onsemi.com
--55C
25C
10
10
10
4
0.30
0.25
0.20
0.15
0.10
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.001
0.0001
0.001
Figure 2. Collector Emitter Saturation Voltage
Figure 4. Base Emitter Saturation Voltage vs.
I
C
I
C
/I
/I
100 mA
B
B
= 10
= 100
Figure 6. Saturation Region
I
0.01
I
C
C
0.01
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
vs. Collector Current
I
0.001
b
Collector Current
, BASE CURRENT (A)
150C
--55C
25C
1 A
0.1
0.1
2 A
25C
0.01
3 A
150C
1
1
--55C
0.1
10
10