NJX1675PDR2G ON Semiconductor, NJX1675PDR2G Datasheet - Page 5

• Manufacturer Part Number: NJX1675PDR2G
• Description: IC TRANS NPN/PNP COMP 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NJX1675PDR2G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 115mV @ 200mA, 2A, 170mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz, 120MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

175
400
375
350
325
300
275
250
225
200
150
0
1
V
EB
Figure 7. Input Capacitance
, EMITTER--BASE VOLTAGE (V)
2
C
ibo
(pF)
0.001
3
0.01
1.0
0.1
10
0.01
Single Pulse Test at T
NPN TYPICAL CHARACTERISTICS
4
Figure 9. Safe Operating Area
0.1
5
http://onsemi.com
6
A
V
= 25C
CE
5
1.0
(V
1 s
Thermal Limit
dc
80
70
60
50
40
30
20
10
)
0
10
5
C
V
obo
cb
Figure 8. Output Capacitance
, COLLECTOR--BASE VOLTAGE (V)
100 ms
10
(pF)
10 ms
1 ms
100
15
20
25
30
35
40